Power gain performance enhancement of independently biased heterojunction bipolar transistor cascode chip
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DF11/pdf
Reference32 articles.
1. Wideband Amplifiers
2. BJT-BJT, FET-BJT, and FET-FET
3. On the operation of cascode gain stages
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2. A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications;Circuit World;2020-04-02
3. A Novel Independently Biased 3-Stack GaN HEMT Configuration for Efficient Design of Microwave Amplifiers;Applied Sciences;2019-04-11
4. Microwave Characteristics of an Independently Biased 3-Stack InGaP/GaAs HBT Configuration;IEEE Transactions on Circuits and Systems I: Regular Papers;2017-05
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