Gate-all-around poly-Si nanowire junctionless thin-film transistors with multiple channels
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=6S1/a=06FG06/pdf
Reference29 articles.
1. Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope
2. Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors
3. Multiple-gate SOI MOSFETs: device design guidelines
4. Design optimization of gate-all-around (GAA) MOSFETs
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1. Quantum and classical simulation of core shell based junctionless field effect transistor with digital application;Engineering Research Express;2024-01-25
2. Variable-Channel Junctionless Poly-Si FETs: Demonstration and Investigation With Different Body Doping Concentrations;IEEE Electron Device Letters;2018-09
3. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors;Japanese Journal of Applied Physics;2017-03-15
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