First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations-Reference-Cited by-同舟云学术

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First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations

Published:2015-09-04 Issue:10 Volume:54 Page:101301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ito Ayako,Akiyama Toru,Nakamura Kohji,Ito Tomonori,Kageshima Hiroyuki,Uematsu Masashi,Shiraishi Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=10/a=101301/pdf

Reference58 articles.

1. Electrical and physico-chemical characterizations of the interface

2. Effect of the oxidation process on the electrical characteristics of 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors

3. Thermal Oxidation and Electrolytic Etching of Silicon Carbide

4. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03

2. Molecular insight of the interface evolution of silicon carbide under hyperthermal atomic oxygen impact;Physics of Fluids;2022-05

3. Reaction mechanisms of the initial steps for the oxidation of (0001¯) C and (0001) Si faces of SiC with OH radicals;Surface Science;2022-05

4. Effects of irradiation defects on the adsorption of oxygen on 3C-SiC low index surfaces;Computational Materials Science;2021-04

5. Study on Failure Process of Silicon-Doped Amorphous Carbon by ReaxFF Molecular Dynamics Simulation for HAMR;IEEE Transactions on Magnetics;2020-01

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