Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations-Reference-Cited by-同舟云学术

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Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations

Published:2015-06-11 Issue:7S2 Volume:54 Page:07JA03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Migas D. B.,Bogorodz V. O.,Filonov A. B.,Shaposhnikov V. L.,Borisenko V. E.,Galkin N. G.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=7S2/a=07JA03/pdf

Reference51 articles.

1. Semiconducting Silicides

2. SEMICONDUCTING SILICIDES - THERMOELECTRIC PROPERTIES AND APPLICATIONS

3. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

4. Luminescence fromβ−FeSi2precipitates in Si. I. Morphology and epitaxial relationship

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1. Interplay between structural changes, surface states and quantum confinement effects in semiconducting Mg₂Si and Ca₂Si thin films;Physical Chemistry Chemical Physics;2023

2. Exploiting the fraternal twin nature of thermoelectrics and topological insulators in Zintl phases as a tool for engineering new efficient thermoelectric generators;Journal of Materials Chemistry C;2023

3. Ca silicide films—promising materials for silicon optoelectronics;Japanese Journal of Applied Physics;2022-12-12

4. Effect of Sacrificial Mg2Si Layers and Kinetic Parameters on the Growth, Structure, and Optical Properties of Thin Ca2Si Films on Silicon Substrates;Semiconductors;2022-10-10

5. Crystal Structure, Optical Properties, and Characteristics of the Band Gap of Ca2Si Semiconductor Films on an Al2O3(0001) Substrate;Semiconductors;2022-10-10

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