Effects of source gas molecules on N–H- and N–D-related defect formations in GaAsN grown by chemical beam epitaxy-Reference-Cited by-同舟云学术

Effects of source gas molecules on N–H- and N–D-related defect formations in GaAsN grown by chemical beam epitaxy

Published:2015-03-13 Issue:4 Volume:54 Page:041001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ikeda Kazuma,Ohshita Yoshio,Tanaka Tomohiro,Honda Takahiko,Inagaki Makoto,Demizu Koshiro,Kojima Nobuaki,Suzuki Hidetoshi,Machida Hideaki,Sudoh Hiroshi,Yamaguchi Masafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4/a=041001/pdf

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4. Material Development for Improved 1eV(GaIn)(NAs) Solar Cell Structures

5. Solar cell efficiency tables (version 41)

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