Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1−xGex nanowire-Reference-Cited by-同舟云学术

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Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1−xGex nanowire

Published:2015-06-01 Issue:6S1 Volume:54 Page:06FG12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lai Yi-Lung,Chang Tai-Yuan,Chang Kow-Ming,Chen Chu-Feng,Lai Chiung-Hui,Chen Yi-Ming,Whang Allen Jong-Woei,Lai Hui-Lung,Chen Huai-Yi,Wang Shiu-Yu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=6S1/a=06FG12/pdf

Reference42 articles.

1. Electrochemical Biosensors - Sensor Principles and Architectures

2. Performance limits of nanobiosensors

3. Nanowire nanosensors

4. Nanowire-Based Electrochemical Biosensors

5. Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isoconversional kinetics of thermal oxidation of mesoporous silicon;Thermochimica Acta;2016-01

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