Statistical characteristics of lifetime distribution based on defect clustering for time-dependent dielectric breakdown in middle- and back-end-of-line-Reference-Cited by-同舟云学术

Statistical characteristics of lifetime distribution based on defect clustering for time-dependent dielectric breakdown in middle- and back-end-of-line

Published:2015-04-17 Issue:5S Volume:54 Page:05EC02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yokogawa Shinji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=5S/a=05EC02/pdf

Reference47 articles.

1. Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics

2. Dominant Factors in TDDB Degradation of Cu Interconnects

3. Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits

4. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics

5. A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics

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