Mechanism of wiggling enhancement due to HBr gas addition during amorphous carbon etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=6S1/a=06FH04/pdf
Reference41 articles.
1. Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist
2. Deposition control for reduction of 193 nm photoresist degradation in dielectric etching
3. Line-edge roughness increase due to wiggling enhanced by initial pattern waviness
4. Undulation of sub-100nm porous dielectric structures: A mechanical analysis
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1. Role of Oxygen in Amorphous Carbon Hard Mask Plasma Etching;ACS Omega;2023-08-31
2. Increase of space width roughness in directed self-assembly patterning arising from shrinking stress in the remaining poly(methyl methacrylate);Journal of Vacuum Science & Technology B;2019-09
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