Photoacoustic Spectra on Laser-Annealed GaAs Surfaces-Reference-Cited by-同舟云学术

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Photoacoustic Spectra on Laser-Annealed GaAs Surfaces

Published:1983-01-01 Issue:S3 Volume:22 Page:199
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Morita Masahiko,Sato Fumio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and optical properties ofn- andp-InSe doped with Sn and As;Journal of Applied Physics;2003-02-15

2. Chapter 5 Photothermal Deflection Spectroscopy Characterization of Ion-Implanted and Annealed Silicon Films;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997

3. Quantitative in-situ photopyroelectric spectroscopy of optoelectronic quantum structures. Theory and experiment with Al0.6Ga0.4As/GaAs quantum wells;Ferroelectrics;1995-03

4. Subgap absorption spectra of ion‐implanted Si and GaAs layers;Applied Physics Letters;1989-12-25

5. Rapid annealing of ion-implanted GaAs;physica status solidi (a);1986-04-16

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