N-polar AlN thin layers grown on Si(111) by plasma-assisted MBE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=5/a=050306/pdf
Reference20 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Room-Temperature Stimulated Emission from AlN at 214 nm
3. The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure
4. Field emission properties of heavily Si-doped AlN in triode-type display structure
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3. Sputter Epitaxy of AlN and GaN on Si(111);physica status solidi (a);2022-12-11
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