Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar $\{ 1\bar{1}00\} $ face, cathodoluminescence imaging, and transmission electron microscopy-Reference-Cited by-同舟云学术

Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar $\{ 1\bar{1}00\} $ face, cathodoluminescence imaging, and transmission electron microscopy

Published:2014-07-18 Issue:8 Volume:53 Page:081301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yao Yongzhao,Ishikawa Yukari,Sugawara Yoshihiro,Sato Koji,Shirai Takayuki,Danno Katsunori,Suzuki Hiroshi,Sakamoto Hidemitsu,Bessho Takeshi,Dierre Benjamin,Watanabe Kentaro,Sekiguchi Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8/a=081301/pdf

Reference41 articles.

1. Silicon Carbide

2. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

3. Degradation of hexagonal silicon-carbide-based bipolar devices

4. Characterization of major in-grown stacking faults in 4H-SiC epilayers

5. Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

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