Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates-Reference-Cited by-同舟云学术

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Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates

Published:2014-01-27 Issue:2 Volume:53 Page:025503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhou Shizhong,Wang Haiyan,Lin Zhiting,Yang Hui,Hong Xiaosong,Li Guoqiang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference54 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

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2. Continuum level-set model for anisotropic wet etching of patterned sapphire substrates;Semiconductor Science and Technology;2021-03-10

3. Micro-LED Technology for Display Applications;Advanced Display Technology;2021

4. 32‐1: Invited Paper: Review of Micro‐light‐emitting‐diode Technology for Micro‐display Applications;SID Symposium Digest of Technical Papers;2019-05-29

5. A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire;Applied Sciences;2018-07-31

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