Electron spectro-microscopic determination of barrier height and spatial distribution of Au and Ag Schottky junctions on boron-doped diamond (001)-Reference-Cited by-同舟云学术

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Electron spectro-microscopic determination of barrier height and spatial distribution of Au and Ag Schottky junctions on boron-doped diamond (001)

Published:2014-04-16 Issue:5S1 Volume:53 Page:05FP03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kono Shozo,Kodama Hideyuki,Ichikawa Kimiyoshi,Yoshikawa Taro,Abukawa Tadashi,Sawabe Atsuhito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=5S1/a=05FP03/pdf

Reference62 articles.

1. Schottky barrier heights on p-type diamond and silicon carbide (6h)

2. Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film

3. Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films

4. Low-compensated boron-doped homoepitaxial diamond films

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4. Origin of two-dimensional hole gas formation on Si-treated diamond surfaces: Surface energy band diagram perspective;Applied Surface Science;2022-05

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