Source-side injection single-polysilicon split-gate flash memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference40 articles.
1. Embedded Non Volatile Memory Markets on the Rise
2. Embedded Flash technologies and their applications: Status & outlook
3. EPROM Cell with high gate injection efficiency
4. A novel high-speed, 5-volt programming EPROM structure with source-side injection
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory;Electronics;2021-02-01
2. Physical principles and current status of emerging non-volatile solid state memories;Electronic Materials Letters;2015-07
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