Low-frequency noise in amorphous indium–gallium–zinc oxide thin-film transistors with an inverse staggered structure and an SiO2gate insulator-Reference-Cited by-同舟云学术

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Low-frequency noise in amorphous indium–gallium–zinc oxide thin-film transistors with an inverse staggered structure and an SiO2gate insulator

Published:2014-04-04 Issue:5 Volume:53 Page:054201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Jae Chul,Lee Ho-Nyeon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure

3. Dry etch damage and recovery of gallium indium zinc oxide thin-film transistors with etch-back structures

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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