Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=5S1/a=05FA13/pdf
Reference30 articles.
1. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
2. Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium
3. Laser action in Eu-doped GaN thin-film cavity at room temperature
4. Demonstration of a visible laser on silicon using Eu-doped GaN thin films
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3. Luminescence Characteristics and Energy Transfer Mechanism of Eu3+, Tm3+ Co-doped GaN Films;ACTA PHOTONICA SINIC;2022
4. Enhanced red emission from Eu-implanted ZnMgO layers and ZnO/ZnMgO quantum structures;Applied Physics Letters;2021-09-13
5. Structure and luminescence properties of Eu3+ and Dy3+ implanted GaN films;Superlattices and Microstructures;2021-08
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