Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC-Reference-Cited by-同舟云学术

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Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC

Published:2014-10-09 Issue:11 Volume:53 Page:115101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanabe Shinichi,Furukawa Kazuaki,Hibino Hiroki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=11/a=115101/pdf

Reference26 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Electronic transport in two-dimensional graphene

4. Graphene photonics and optoelectronics

5. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

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1. Self-heating controlled current-voltage and noise characteristics in graphene;Journal of Physics D: Applied Physics;2020-12-21

2. An Effort Towards Full Graphene Photodetectors;Photonic Sensors;2020-11-19

3. Production and processing of graphene and related materials;2D Materials;2020-01-29

4. Dynamic modulation of the Fermi energy in suspended graphene backgated devices;Science and Technology of Advanced Materials;2019-06-03

5. Simultaneous etching and transfer — Free multilayer graphene sheets derived from C60 thin films;Journal of Industrial and Engineering Chemistry;2018-08

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