Low-cost and scalable embedded nonvolatile memory using quasi-planar bulk transistor with standard CMOS gate stacks-Reference-Cited by-同舟云学术

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Low-cost and scalable embedded nonvolatile memory using quasi-planar bulk transistor with standard CMOS gate stacks

Published:2014-01-01 Issue:4S Volume:53 Page:04EC13
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ota Kensuke,Saitoh Masumi,Tanaka Chika,Matsushita Daisuke,Numata Toshinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement

2. An empirical model for device degradation due to hot-carrier injection

3. Some aspects of hot-electron aging in MOSFET's

4. A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress

5. Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Study of Random Telegraph Noise in Trigate Nanowire MOSFETs;IEEE Transactions on Electron Devices;2015-11

2. Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors;Japanese Journal of Applied Physics;2015-03-04

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