Evaluation of phonon confinement in ultrathin-film silicon-on-insulator by Raman spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference32 articles.
1. Mechanical and Electrical Analysis of Strained Liner Effect in 35 nm Fully Depleted Silicon-on-Insulator Devices with Ultra Thin Silicon Channels
2. Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology
3. Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs
4. 50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations
5. Raman shifts in Si nanocrystals
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1. Interaction between confined phonons and photons in periodic silicon resonators;Physical Review B;2018-03-30
2. Development of interatomic potential of Ge(1−x−y)SixSnyternary alloy semiconductors for classical lattice dynamics simulation;Japanese Journal of Applied Physics;2018-03-08
3. Correlation between temperature dependence of Raman shifts and in-plane strains in an AlGaN/GaN stack;Journal of Applied Physics;2017-01-21
4. Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon–germanium films;Applied Physics Express;2016-06-01
5. Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs;Solid-State Electronics;2016-03
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