Photoinduced top-gate effect in amorphous InGaZnO4thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4/a=040307/pdf
Reference22 articles.
1. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
2. Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
3. Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor
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1. Crystal-Structure-Dependent Photocatalytic Redox Activity and Reaction Pathways over Ga2O3 Polymorphs;ACS Applied Materials & Interfaces;2021-10-19
2. Sensor applications of InGaZnO thin-film transistors;Japanese Journal of Applied Physics;2019-05-31
3. Sensing of Electrostatic Potential by Using Top-Gate Effect in Amorphous In–Ga–Zn–O Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-07
4. High quality crystal growth and anisotropic physical characterization of β -Ga 2 O 3 single crystals grown by EFG method;Journal of Alloys and Compounds;2017-08
5. Dependence of photoinduced top-gate effect in amorphous InGaZnO4thin-film transistors on photon flux and top-gate voltage;Japanese Journal of Applied Physics;2017-05-26
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