Miniband formulation in Ge/Si quantum dot array
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04EJ14/pdf
Reference27 articles.
1. Miniband Calculation of 3-D Nanostructure Array for Solar Cell Applications
2. Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique
3. Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching
4. Index-Coupled Quantum-Dot 1.3-$\mu$m Distributed-Feedback Lasers Fabricated With a Combination MOCVD/MBE Process
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars;Japanese Journal of Applied Physics;2021-02-10
2. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide;Nanotechnology;2017-11-06
3. Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice;IEEE Transactions on Electron Devices;2017-11
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