Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=12/a=124101/pdf
Reference25 articles.
1. Control of interface states at metal/6H-SiC(0001) interfaces
2. High performance of high-voltage 4H-SiC Schottky barrier diodes
3. Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications
4. Surface States and Barrier Height of Metal‐Semiconductor Systems
5. Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor
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2. P-Type α-CuGaO2 Electronics: A Study on Gap States and Fermi Level Pinning and a Solution to Schottky to Ohmic Transition for Electronic Applications;ACS Applied Electronic Materials;2022-10-04
3. Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion;Japanese Journal of Applied Physics;2021-06-28
4. Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height;Journal of Materials Science: Materials in Electronics;2021-06-02
5. Hybrid Anodic and Metal-Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires;Small;2019-01-22
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