Experimental study on interface region of two-dimensional Si layers by forming gas annealing-Reference-Cited by-同舟云学术

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Experimental study on interface region of two-dimensional Si layers by forming gas annealing

Published:2016-03-04 Issue:4S Volume:55 Page:04ED04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuno Tomohisa,Suzuki Yuhya,Kikuchi Reika,Suzuki Ayaka,Inoue Ryohsuke,Yamanaka Masahiro,Yokoyama Miki,Nagamine Yoshiki,Aoki Takashi,Maeda Tatsuro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04ED04/pdf

Reference36 articles.

1. Silicon-on-Insulator Technology: Materials to VLSI

2. Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

3. Electro-Luminescence from Ultra-Thin Silicon

4. Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

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