Uniform bipolar resistive switching behaviors in BiFeO3 thin films on Fe-doped LaNiO3 electrodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=9/a=095801/pdf
Reference29 articles.
1. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
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1. Ferroelectric photovoltaic effect and resistive switching behavior modulated by ferroelectric/electrode interface coupling;Journal of Materials Science: Materials in Electronics;2020-10-19
2. Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices;Journal of Materials Science: Materials in Electronics;2019-11-18
3. Bipolar resistive switching effect and mechanism of solution-processed orthorhombic Bi2SiO5 thin films;Current Applied Physics;2019-09
4. Electrode effect regulated resistance switching and selector characteristics in Nb doped SrTiO3 single crystal for potential cross-point memory applications;Journal of Alloys and Compounds;2018-01
5. Bipolar resistive switching and its temperature dependence in the composite structure of BiFeO3 bilayer;Applied Physics A;2016-03-09
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