Different dielectric breakdown mechanisms for RF-MgO and naturally oxidized MgO-Reference-Cited by-同舟云学术

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Different dielectric breakdown mechanisms for RF-MgO and naturally oxidized MgO

Published:2014-07-31 Issue:8 Volume:7 Page:083002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wang Xiaobin,Wang Zihui,Hao Xiaojie,Zhou Yuchen,Zhang Jing,Gan Huadong,Jung Dong Ha,Satoh Kimihiro,Yen Bing,Malmhall Roger,Huai Yiming

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=8/a=083002/pdf

Reference18 articles.

1. A 4-Mb toggle MRAM based on a novel bit and switching method

2. Commercial TMR heads for hard disk drives: characterization and extendibility at 300 gbit2

3. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

4. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

5. High-Power Coherent Microwave Emission from Magnetic Tunnel Junction Nano-oscillators with Perpendicular Anisotropy

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3. Strain-mediated voltage controlled magnetic anisotropy based switching for magnetic memory applications;Journal of Applied Physics;2023-09-26

4. Acoustically assisted energy efficient field free spin orbit torque switching of out of plane nanomagnet;Journal of Applied Physics;2023-04-03

5. Injection locking of spin torque nano oscillators using surface acoustic waves;Journal of Magnetism and Magnetic Materials;2022-12

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