Luminescence of Acceptors in Mg-Doped GaN-Reference-Cited by-同舟云学术

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Luminescence of Acceptors in Mg-Doped GaN

Published:2013-08-01 Issue:8S Volume:52 Page:08JJ03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Monemar Bo,Khromov Sergey,Pozina Galia,Paskov Plamen,Bergman Peder,Hemmingsson Carl,Hultman Lars,Amano Hiroshi,Avrutin Vitaliy,Li Xing,Morkoç Hadis

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Evidence for Two Mg Related Acceptors in GaN

2. Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state

3. Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

4. Optical signature of Mg-doped GaN: Transfer processes

5. Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN

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3. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

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