High Quality, Low Cost Ammonothermal Bulk GaN Substrates-Reference-Cited by-同舟云学术

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High Quality, Low Cost Ammonothermal Bulk GaN Substrates

Published:2013-08-01 Issue:8S Volume:52 Page:08JA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ehrentraut Dirk,Pakalapati Rajeev T.,Kamber Derrick S.,Jiang Wenkan,Pocius Douglas W.,Downey Bradley C.,McLaurin Melvin,D'Evelyn Mark P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

2. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

3. Nanomaterial integration in micro LED technology: Enhancing efficiency and applications;Next Nanotechnology;2024

4. Growth of bulk GaN crystals for the production of substrates;Reference Module in Materials Science and Materials Engineering;2024

5. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27

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