First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=3/a=035501/pdf
Reference22 articles.
1. Effects of the narrow band gap on the properties of InN
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. Surface-plasmon-enhanced light emitters based on InGaN quantum wells
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1. Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption;Crystal Growth & Design;2023-12-14
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3. Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets;Nanomaterials;2022-11-03
4. Activated InN nanocolumns as sensitive halogen sensor;Journal of Materials Science: Materials in Electronics;2021-01
5. Raman spectroscopy of epitaxial InGaN/Si in the central composition range;Japanese Journal of Applied Physics;2019-05-14
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