High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3Passivation Layer-Reference-Cited by-同舟云学术

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High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3Passivation Layer

Published:2013-07-01 Issue:7 Volume:6 Page:072103
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Guo Hao,Zhang Xiong,Chen Hongjun,Liu Honggang,Zhang Peiyuan,Liao Qinghua,Hu Shujuan,Chang Hudong,Sun Bing,Wang Shengkai,Cui Yiping

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=7/a=072103/pdf

Reference27 articles.

1. Fabrication of LED based on III–V nitride and its applications

2. Enhancement of light extraction from light emitting diodes

3. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

4. High-Performance GaN-Based Vertical-Injection Light-Emitting Diodes With TiO$_{2}$–SiO$_{2}$ Omnidirectional Reflector and n-GaN Roughness

5. Nitride-Based LEDs With a Hybrid Al Mirror $+ {\hbox {TiO}} _{2} /{\hbox {SiO}}_{2}$ DBR Backside Reflector

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