High-Temperature 1.3 µm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=8/a=082703/pdf
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1. First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate
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3. Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit
4. Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
5. High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology
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