A New Photoluminescence Method of Characterizing the In-Depth Profile of Thermally Induced Defects in CZ

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A New Photoluminescence Method of Characterizing the In-Depth Profile of Thermally Induced Defects in CZ–Si

Published:1982-01-01 Issue:S1 Volume:21 Page:127
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakayama Hiroshi,Katsura Johji,Nishino Taneo,Hamakawa Yoshihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si;Chinese Physics B;2023-01-01

2. An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma;Journal of Physics: Condensed Matter;2011-09-15

3. Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;2007-04-24

4. Nondestructive depth profiling of carrier lifetimes in full silicon wafers;Applied Physics Letters;1986-01-06

5. Room temperature photoluminescence from etched silicon surfaces: The effects of chemical pretreatments and gaseous ambients;Journal of Physics and Chemistry of Solids;1986-01

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