Stability of double gate amorphous In–Ga–Zn–O thin-film transistors with various top gate designs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=12/a=120303/pdf
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1. Amorphous oxide channel TFTs
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4. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications;Journal of Semiconductors;2021-03-01
2. Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-08
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