Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability-Reference-Cited by-同舟云学术

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Published:2017-02-09 Issue:4S Volume:56 Page:04CD02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mori Takahiro,Migita Shinji,Fukuda Koichi,Asai Hidehiro,Morita Yukinori,Mizubayashi Wataru,Liu Yongxun,O’uchi Shin-ichi,Fuketa Hiroshi,Otsuka Shintaro,Yasuda Tetsuji,Masahara Meishoku,Ota Hiroyuki,Matsukawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CD02/pdf

Reference33 articles.

1. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

2. I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering

3. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

4. Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack

5. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

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