Control of GaN crystal habit by solution stirring in the Na-flux method-Reference-Cited by-同舟云学术

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Control of GaN crystal habit by solution stirring in the Na-flux method

Published:2016-11-08 Issue:1S Volume:56 Page:01AD05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Murakami Kosuke,Imade Mamoru,Imanishi Masayuki,Honjo Masatomo,Imabayashi Hiroki,Matsuo Daisuke,Nakamura Kosuke,Maruyama Mihoko,Yoshimura Masashi,Mori Yusuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=1S/a=01AD05/pdf

Reference32 articles.

1. Origin of forward leakage current in GaN-based light-emitting devices

2. Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

3. Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles

4. Growth and strain characterization of high quality GaN crystal by HVPE

5. Excellent crystallinity of truly bulk ammonothermal GaN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

2. Gallium nitride;Single Crystals of Electronic Materials;2019

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