Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate-Reference-Cited by-同舟云学术

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Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate

Published:2016-12-05 Issue:1 Volume:56 Page:011301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Umezawa Hitoshi,Shikata Shin-ichi,Kato Yukako,Mokuno Yoshiaki,Seki Akinori,Suzuki Hiroshi,Bessho Takeshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=1/a=011301/pdf

Reference20 articles.

1. Fundamentals of Power Semiconductor Devices

2. Characterization and Comparison of High Blocking Voltage IGBTs and IEGTs Under Hard- and Soft-Switching Conditions

3. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

4. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

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1. Fabrication of YAG ceramics surface without damage and grain boundary steps using catalyzed chemical wet etching;CIRP Journal of Manufacturing Science and Technology;2023-12

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