Improved understanding of the recombination rate at inverted p+ silicon surfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=8S2/a=08MB05/pdf
Reference31 articles.
1. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
2. P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells
3. Silicon solar cells with total area efficiency above 25 %
4. Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3
5. Progress in n-type Si solar cell and module technology for high efficiency and low cost
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