On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors-Reference-Cited by-同舟云学术

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On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

Published:2017-02-14 Issue:4S Volume:56 Page:04CD04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fukuda Koichi,Mori Takahiro,Asai Hidehiro,Hattori Junichi,Mizubayashi Wataru,Morita Yukinori,Fuketa Hiroshi,Migita Shinji,Ota Hiroyuki,Masahara Meishoku,Endo Kazuhiko,Matsukawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CD04/pdf

Reference37 articles.

1. A Review of Sharp-Switching Devices for Ultra-Low Power Applications

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. A subthermionic tunnel field-effect transistor with an atomically thin channel

4. A tunnel field effect transistor is a substitute for ultra-low power applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems;Japanese Journal of Applied Physics;2022-11-28

2. TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation;2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2020-09-23

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