Investigation of spin lifetime in strained InxGa1−xAs channels through all-electrical spin injection and detection
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=9/a=093001/pdf
Reference33 articles.
1. Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
2. Electrical spin injection and detection in lateral all-semiconductor devices
3. Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions
4. Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions
5. Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonequilibrium electron spin relaxation in n-type doped GaAs sample;Journal of Statistical Mechanics: Theory and Experiment;2019-09-27
2. Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices;Physical Review B;2019-07-29
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