Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates-Reference-Cited by-同舟云学术

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Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

Published:2015-07-14 Issue:8 Volume:8 Page:085501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Katzer D. Scott,Nepal Neeraj,Meyer David J.,Downey Brian P.,Wheeler Virginia D.,Storm David F.,Hardy Matthew T.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=8/a=085501/pdf

Reference21 articles.

1. Appraisal of semiconductor-metal-semiconductor transistor

2. Stable and epitaxial metal/III-V semiconductor heterostructures

3. Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB2 and the suitability of ZrB2 as a substrate for GaN film

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3. Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates;Journal of Vacuum Science & Technology A;2023-06-08

4. Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs;IEEE Transactions on Electron Devices;2023-06

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