Resistance switching memory characteristics of CaF2/Si/CaF2resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers-Reference-Cited by-同舟云学术

Resistance switching memory characteristics of CaF2/Si/CaF2resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers

Published:2016-06-20 Issue:7 Volume:9 Page:074001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kuwata Yuya,Suda Keita,Watanabe Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=7/a=074001/pdf

Reference33 articles.

1. Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam Epitaxy

2. Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate

3. Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy

4. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio

5. Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

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