Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=12/a=121002/pdf
Reference23 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. GaInN/GaN multiple quantum wells green LEDs
3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
5. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
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3. Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition;Applied Physics Letters;2023-06-05
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