Single and Double Diffusion Breaks in 14nm FinFET and Beyond-Reference-Cited by-同舟云学术

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Single and Double Diffusion Breaks in 14nm FinFET and Beyond

Published:2017-09-20 Issue: Volume: Page:
ISSN:
Container-title:Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials
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Author:

Miyaguchi K.,Bufler F.,Chiarella T.,Matagne P.,Horiguchi N.,Keersgieter A.D.,Eneman G.,Spessot A.,Parvais B.,Verkest D.,Mocuta A.

Publisher

The Japan Society of Applied Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break;IEEE Transactions on Electron Devices;2024-07

2. Optimization of FINFET Single Diffusion Break Structure Profile;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

3. Simulation Study on Different Integration Schemes to Form Single Diffusion Break;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

4. Improving Pin Accessibility of Standard Cell Libraries in 7nm Technology;2022 23rd International Symposium on Quality Electronic Design (ISQED);2022-04-06

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