Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal–insulator–semiconductor high-electron mobility transistor for power applications-Reference-Cited by-同舟云学术

Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal–insulator–semiconductor high-electron mobility transistor for power applications

Published:2015-09-15 Issue:10 Volume:8 Page:104102
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Hsieh Ting-En,Lin Yueh-Chin,Liao Jen-Ting,Lan Wei-Cheng,Chin Ping-Chieh,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=10/a=104102/pdf

Reference22 articles.

1. High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

2. High breakdown GaN HEMT with overlapping gate structure

3. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

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