Influence of Ga Concentration on the Ordering Process of GaxIn1-xP Grown on GaAs-Reference-Cited by-同舟云学术

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Influence of Ga Concentration on the Ordering Process of GaxIn1-xP Grown on GaAs

Published:1993-01-01 Issue:S3 Volume:32 Page:716
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Eyal A.,Beserman R.,Wei S. H.,Zunger Alex,Maayan E.,Kreinin O.,Salzman J.,Westphalen R.,Heime K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long-range order in CdZnTe epilayers;Journal of Physics D: Applied Physics;1999-12-22

2. Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD;Journal of Crystal Growth;1999-03

3. Valence band splitting in Cd(1−x)ZnxTe epilayers;Thin Solid Films;1998-12

4. Electronic and optical properties of laterally composition-modulatedAlxIn1−xAs,GaxIn1−xP,andGaxIn1−xAsalloys;Physical Review B;1998-05-15

5. Ordering dependence of pyroelectricity in GaxIn1−xP;Journal of Applied Physics;1997-04-15

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