CuInSe2Thin Film Prepared by Evaporation of Cu2Se and In2Se3-Reference-Cited by-同舟云学术

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CuInSe2Thin Film Prepared by Evaporation of Cu2Se and In2Se3

Published:1993-01-01 Issue:S3 Volume:32 Page:84
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ashida Atsushi,Hachiuma Yoshio,Yamamoto Nobuyuki,Ito Taichiro,Cho Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on optoelectronic properties of CuInSe2/CuInSSe films and PN junctions;Materials Chemistry and Physics;2024-08

2. Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing;Japanese Journal of Applied Physics;2007-10-12

3. Formation of In2Se3 thin films and nanostructures using electrochemical atomic layer epitaxy;Journal of Electroanalytical Chemistry;2003-11

4. Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110);Journal of Applied Physics;2002-02-15

5. Electrodeposition of CU2SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).;MRS Proceedings;2002

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