Measurement and empirical equation of critical stresses for slip generation from oxide precipitates in silicon wafers

Author:

Fujise Jun,Ko Bonggyun,Ono Toshiaki,Tanaka Masaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The Study of Slip Defects in Furnace High Temperature Process;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. Thermally activated plastic deformation of Si single crystals at temperatures above 1173 K;Japanese Journal of Applied Physics;2023-02-01

3. Effect of ion implantation on mechanical strength of silicon wafers;Japanese Journal of Applied Physics;2022-03-16

4. Effect of Surface Oxygen Concentration on Wafer Strength in Floating Zone Si Wafers;ECS Journal of Solid State Science and Technology;2020-10-07

5. The Critical Shear Stress for Slip Generation due to Scratches in Silicon Wafers;ECS Journal of Solid State Science and Technology;2020-01-06

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