Measurement and empirical equation of critical stresses for slip generation from oxide precipitates in silicon wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=3/a=035501/pdf
Reference18 articles.
1. Effect of oxygen on dislocation movement in silicon
2. Crystal defects and junction properties in the evolution of device fabrication technology
3. A TEM study of slip lines in power MOS devices
4. Onset of slip in silicon containing oxide precipitates
5. Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms
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2. Thermally activated plastic deformation of Si single crystals at temperatures above 1173 K;Japanese Journal of Applied Physics;2023-02-01
3. Effect of ion implantation on mechanical strength of silicon wafers;Japanese Journal of Applied Physics;2022-03-16
4. Effect of Surface Oxygen Concentration on Wafer Strength in Floating Zone Si Wafers;ECS Journal of Solid State Science and Technology;2020-10-07
5. The Critical Shear Stress for Slip Generation due to Scratches in Silicon Wafers;ECS Journal of Solid State Science and Technology;2020-01-06
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