Reaction mechanisms at 4H-SiC/SiO2interface during wet SiC oxidation
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FR08/pdf
Reference43 articles.
1. Thermal Oxidation and Electrolytic Etching of Silicon Carbide
2. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
3. Comparative oxidation studies of SiC(0001̄) and SiC(0001) surfaces
4. High-Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide
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2. Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces;Japanese Journal of Applied Physics;2022-03-25
3. Ab initio -based approach for the oxidation mechanisms at SiO2 /4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction;Physical Review Materials;2021-11-03
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5. Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation;Japanese Journal of Applied Physics;2021-02-12
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