Characteristics of quantum-dot light-emitting diodes fabricated using a sputtered zinc tin oxide electron-transporting layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=3S1/a=03DC01/pdf
Reference30 articles.
1. Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure
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4. Wearable red–green–blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing
5. Emergence of colloidal quantum-dot light-emitting technologies
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5. Improving the charge balance and performance of CdSe/ZnS quantum-dot light-emitting diodes with a sputtered zinc-tin-oxide electron-transport layer and a thermally evaporated tungsten-oxide charge-restricting layer;Japanese Journal of Applied Physics;2019-09-06
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