Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks-Reference-Cited by-同舟云学术

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

Published:2018-06-11 Issue:8S3 Volume:57 Page:08RB04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ota Yushi^ORCID,Hombe Atsushi,Nezasa Ryota,Yurasov Dmitry,Novikov Alexey,Shaleev Mikhail,Baidakova Natalie,Morozova Elena,Kurokawa Yasuyoshi,Usami Noritaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S3/a=08RB04/pdf

Reference30 articles.

1. A new era for solar

2. Thin-film solar cells: an overview

3. All-Solution-Processed Random Si Nanopyramids for Excellent Light Trapping in Ultrathin Solar Cells

4. 19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon

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3. Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask;Materials Science in Semiconductor Processing;2020-08

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