Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces
Author:
Funder
Core Research for Evolutional Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=2S1/a=02BE04/pdf
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1. Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy;Journal of the Korean Physical Society;2023-11-20
2. Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HYPE method;J KOR CRYST GROWTH C;2023
3. Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process;Japanese Journal of Applied Physics;2022-11-14
4. Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC;Materials Science in Semiconductor Processing;2021-08
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